Previous and future works
DOI: 10.1021/acs.nanolett.5c03409
Open Access
For years, itinerant charge carriers in ferroelectric insulators were believed to completely quench ferroelectricity. Recent breakthroughs, however, demonstrated the existence of a novel class of quasi-two-dimensional polar metals with promising applications in nonvolatile electronics and...
DOI: 10.1021/acs.nanolett.2c00992
R. Erlandsen, R. T. Dahm, F. Trier, M. Scuderi, E. Di Gennaro, A. Sambri, C. Kirchert, N. Pryds F. Miletto Granozio, T. S. JespersenFreestanding oxide membranes constitute an intriguing material platform for new functionalities and allow integration of oxide electronics with technologically important platforms such as silicon. Sambri et al. recently reported a method to fabricate freestanding LaAlO3/SrTiO3 (LAO/STO) membranes by...
The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of...
The discovery of 2D conductivity at the LaAlO3/SrTiO3 interface has been linking, for over a decade, two of the major current research fields in materials science: correlated transition-metal-oxide systems and low-dimensional systems. Notably, despite the 2D nature of the interfacial electron gas,...